A research team affiliated with UNIST has made a advancement in controlling spin-based signals within a new magnetic material, paving the way for next-generation electronic devices. Their work demonstrates a method to reversibly switch the direction of spin-to-charge conversion, a key step toward ultra-fast, energy-efficient spintronic semiconductors that do not require complex setups or strong magnetic fields.
Led by Professor Jung-Woo Yoo from the Department of Materials Science and Engineering and Professor Changhee Sohn from the Department of Physics at UNIST, the team has experimentally shown that within the altermagnetic material ruthenium oxide (RuO₂), the process of converting spin currents into electrical signals can be precisely controlled and flipped at will.
This breakthrough is expected to accelerate the development of low-power devices capable of processing information more efficiently than current technologies. The study is published in the journal Nano Letters.









