The device you are currently reading this article on was born from the silicon revolution. To build modern electrical circuits, researchers control silicon’s current-conducting capabilities via doping, which is a process that introduces either negatively charged electrons or positively charged “holes” where electrons used to be. This allows the flow of electricity to be controlled and for silicon involves injecting other atomic elements that can adjust electrons—known as dopants—into its three-dimensional (3D) atomic lattice.
Silicon’s 3D lattice, however, is too big for next-generation electronics, which include ultra-thin transistors, new devices for optical communication, and flexible bio-sensors that can be worn or implanted in the human body. To slim things down, researchers are experimenting with materials no thicker than a single sheet of atoms, such as graphene. But the tried-and-true method for doping 3D silicon doesn’t work with 2D graphene, which consists of a single layer of carbon atoms that doesn’t normally conduct a current.
Rather than injecting dopants, researchers have tried layering on a “charge-transfer layer” intended to add or pull away electrons from the graphene. However, previous methods used “dirty” materials in their charge-transfer layers; impurities in these would leave the graphene unevenly doped and impede its ability to conduct electricity.
