Menu

Blog

Jul 18, 2023

Protons set to power next-generation memory devices

Posted by in categories: materials, robotics/AI

A proton-driven approach that enables multiple ferroelectric phase transitions sets the stage for ultralow power, high-capacity computer chips.

A proton-mediated approach that produces multiple in could help develop high-performance memory devices, such as brain-inspired, or neuromorphic, computing chips, a KAUST-led international team has found. The paper is published in the journal Science Advances.

Ferroelectrics, such as indium selenide, are intrinsically polarized materials that switch polarity when placed in an , which makes them attractive for creating memory technologies. In addition to requiring low operating voltages, the resulting memory devices display excellent maximum read/write endurance and write speeds, but their storage capacity is low. This is because existing methods can only trigger a few ferroelectric phases, and capturing these phases is experimentally challenging, says Xin He, who co-led the study under the guidance of Fei Xue and Xixiang Zhang.

Comments are closed.