DGIST’s Electrical Engineering and Computer Science Professor Jang Jae-eun and Professor Kwon Hyuk-jun and their research team have developed a high-efficiency process technology for next-generation AI memory transistors. The work is published online in Advanced Science.
The team developed a nanosecond pulsed laser-based “selective heat treatment method” and “thermal energy minimization control process technology” to overcome the shortcomings of the high-temperature process of ferroelectric field-effect transistors, which have non-volatile memory characteristics, high-speed operation, low power consumption, long lifetime, and durability.
The new technology process enables the realization of heterojunction structures, which are the core technology of next-generation AI semiconductors.
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